PART |
Description |
Maker |
MRFE6VP100H MRFE6VP100HR5 MRFE6VP100HSR5 |
RF Power LDMOS Transistors
|
Freescale Semiconductor, Inc
|
MRF13750HS |
RF Power LDMOS Transistors
|
NXP Semiconductors
|
LET21030C -LET21030C |
RF POWER TRANSISTORS Ldmos Enhanced Technology RF功率晶体管LDMOS的增强技
|
STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
|
LET21004 |
RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY IN PLASTIC PACKAGE
|
STMICROELECTRONICS[STMicroelectronics]
|
ATC100B9R1CT500XT MCGPR63V477M13X26-RH ATC100B0R7B |
RF Power LDMOS Transistors RF Power LDMOS Transistors
|
Freescale Semiconductor, Inc Freescale Semiconductor, In... Freescale Semiconductor...
|
BLF6G22-180RN BLF6G22LS-180RN |
180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET Power LDMOS transistor BLF6G22-180RN<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,; Power LDMOS transistor BLF6G22-180RN<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
BLA1011-300 LA1011-300 |
Avionics LDMOS transistors Avionics LDMOS transistor BLA1011-300<SOT957A (LDMOST)|<<http://www.nxp.com/packages/SOT957A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
BLF6G22-45 |
Power LDMOS transistor Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
MHVIC2115R2 |
MHVIC2115R2 2.2 GHz, 26 V, 23/34 dBm W-CDMA RF LDMOS Integrated Circuit RF LDMOS Wideband Integrated Power Amplifier
|
MOTOROLA[Motorola, Inc]
|
MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1 |
GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers RF LDMOS Wideband Integrated Power Amplifiers
|
Freescale (Motorola) MOTOROLA[Motorola, Inc]
|
BLF7G27L-90P BLF7G27LS-90P |
90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Power LDMOS transistor
|
NXP Semiconductors N.V.
|